©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002
2N70
51
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings* T
A
=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These rtings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
A
=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
Symbol Parameter Ratings Units
V
CEO
Collector-Emitter Voltage 100 V
V
CBO
Collector-Base Voltage 100 V
V
EBO
Emitter-Base Voltage 12 V
I
C
Collector Current 1.5 A
T
J
, T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BV
CEO
Collector-Emitter Breakdown Voltage * I
C
= 1.0mA, I
B
= 0 100 V
BV
CBO
Collector-Base Breakdown Voltage I
C
= 100µA, I
B
= 0 100 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= 1.0mA, I
C
= 0 12 V
I
CBO
Collector Cut-off Current V
CB
= 80V, I
E
= 0 0.1 µA
I
CES
V
CE
= 80V, I
E
= 0 0.2 µA
I
EBO
Emitter Cut-off Current V
EB
= 7.0V, I
C
= 0 0.1 µA
On Characteristics *
h
FE
DC Current Gain V
CE
= 5.0V, I
C
= 100mA
V
CE
= 5.0V, I
C
= 1.0A
10,000
1,000 20,000
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 100mA, I
B
= 0.1mA 1.5 V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= 100mA, V
BE
=5.0V 2.0 V
Small Signal Characteristics
f
T
Transition Frequency I
C
= 100mA, V
CE
=5.0V 200 MHz
h
fe
Small Signal Current Gain V
CE
=5.0V, I
C
= 100mA,
f = 20MHz
10 100
1. Emitter 2. Collector 3. Base
2N7051
NPN Darlington Transistor
• This device designed for applications requiring extremely high gain at
collector currents to 1.0A and high breakdown voltage.
• Sourced from Process 06.
• See 2N7052 for Characteristics.
TO-92
1