DS30099 Rev. 4P-1 1 of 3 2N7002W
2N7002W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
c183 Low On-Resistance
c183 Low Gate Threshold Voltage
c183 Low Input Capacitance
c183 Fast Switching Speed
c183 Low Input/Output Leakage
c183 Ultra-Small Surface Mount Package
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol 2N7002W Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage R
GS
c163 1.0Mc87 VDGR 60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 1) Continuous
Continuous @ 100°C
Pulsed
I
D
115
73
800
mA
Total Power Dissipation (Note 1)
Derating above T
A
= 25°C
P
d
200
1.60
mW
mW/°C
Thermal Resistance, Junction to Ambient Rc113JA 625 K/W
Operating and Storage Temperature Range Tj,TSTG -55 to +150 °C
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width c163 300c109s, duty cycle c163 2%.
A
E
J
L
M
B C
H
G
D
K
TOP VIEW
D
SG
Mechanical Data
c183 Case: SOT-323, Molded Plastic
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Terminal Connections: See Diagram
c183 Marking: K72
c183 Weight: 0.006 grams (approx.)
SOT-323
Dim Min Max
A 0.30 0.40
B 1.15 1.35
C 2.00 2.20
D 0.65 Nominal
E 0.30 0.40
G 1.20 1.40
H 1.80 2.20
J 0.0 0.10
K 0.90 1.00
L 0.25 0.40
M 0.10 0.25
All Dimensions in mm
NEW
PRODUCT