2N7052 / 2N7053 / NZT7053
2N7052 NZT7053
NPN Darlington Transistor
This device is designed for applications requiring extremely high
gain at collector currents to 1.0 A and high breakdown voltage.
Sourced from Process 06.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 100 V
V
CBO
Collector-Base Voltage 100 V
V
EBO
Emitter-Base Voltage 12 V
I
C
Collector Current - Continuous 1.5 A
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
C
B
E
TO-92
B
C
C
SOT-223
E
Symbol Characteristic Max Units
2N7052 2N7053 *NZT7053
PD Total Device Dissipation
Derate above 25°C
625
5.0
1,000
8.0
1,000
8.0
mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 50 125 °C/W
2N7053
TO-226
C
B
E
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
Discrete POWER & Signal
Technologies
ã 1997 Fairchild Semiconductor Corporation