DS30301 Rev. 2 - 2 1 of 3 2N7002T
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2N7002T
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
c183 Low On-Resistance
c183 Low Gate Threshold Voltage
c183 Low Input Capacitance
c183 Fast Switching Speed
c183 Low Input/Output Leakage
c183 Ultra-Small Surface Mount Package
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage R
GS
c163 1.0Mc87 VDGR 60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current Continuous
Continuous @ 100°C
Pulsed
I
D
115
73
800
mA
Total Power Dissipation Pd 150 mW
Thermal Resistance, Junction to Ambient Rc113JA 833 °C/W
Operating and Storage Temperature Range Tj,TSTG -55 to +150 °C
Source
Gate
Drain
Mechanical Data
c183 Case: SOT-523, Molded Plastic
c183 Case Material UL Flammability Rating: 94V-0
c183 Moisture sensitivity: Level 1 per J-STD-020A
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Terminal Connections: See Diagram
c183 Marking: 72 (See Page 3)
c183 Weight: 0.002 grams (approx.)
c183 Ordering Information, see Page 3
T
C
U
D
O
R
P
W
E
N
A
M
J
LD
B
D
G
C
S
H
K
G
TOP VIEW
N
SOT-523
Dim Min Max Typ
A 0.15 0.30 0.22
B 0.75 0.85 0.80
C 1.45 1.75 1.60
D c190c1900.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
J 0.00 0.10 0.05
K 0.60 0.80 0.75
L 0.10 0.30 0.22
M 0.10 0.20 0.12
N 0.45 0.65 0.50
c97 0c176 8c176c190
All Dimensions in mm