L2N7002LT1–1/3
LESHAN RADIO COMPANY, LTD.
1
3
2
L2N7002LT1
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
115 mAMPS
60 VOLTS
R
DS(on)
= 7.5
1
2
3
N - Channel
DevicePackageShipping
ORDERING INFORMATION
2N7002LT1SOT–233000 Tape & Reel
W
702
702= Device Code
W= Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
3
21
Drain
GateSource
2N7002LT3SOT–2310,000 Tape & Reel
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DSS
60 Vdc
Drain–Gate Voltage (R
GS
= 1.0 MΩ) V
DGR
60 Vdc
Drain Current
– Continuous T
C
= 25°C (Note 1.)
– Continuous T
C
= 100°C (Note 1.)
– Pulsed (Note 2.)
I
D
I
D
I
DM
± 115
± 75
± 800
mAdc
Gate–Source Voltage
– Continuous
– Non–repetitive (t
p
≤ 50 µs)
V
GS
V
GSM
± 20
± 40
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board
(Note 3.) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient R
θJA
556 °C/W
Total Device Dissipation
Alumina Substrate,(Note 4.) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient R
θJA
417 °C/W
Junction and Storage Temperature T
J,
T
stg
– 55 to
+150
°C
1.The Power Dissipation of the package may result in a lower continuous drain
current.
2.Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3.FR–5 = 1.0 x 0.75 x 0.062 in.
4.Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23