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2N7002CSM

器件描述:N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
器件厂商:SEME-LAB [Seme LAB]
文件大小:14.46KB,共2页
Sponsor by e络盟
器件资料摘要:
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 7/98
2N7002CSM
* Pulse width limited by maximum junction temperature.
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
• V
(BR)DSS
= 60V
• RDS
(ON)
= 7.5WW
• I
D
= 0.115A
V
DS
Drain – Source Voltage
V
GS
Gate – Source Voltage
I
D
Drain Current @ T
CASE
= 25°C
I
D
Drain Current @ T
CASE
= 100°C
I
DM
Pulsed Drain Current *
P
D
Power Dissipation @ T
CASE
= 25°C
P
D
Power Dissipation @ T
CASE
= 100°C
T
j
Operating Junction Temperature Range
T
stg
Storage Temperature Range
60V
±40V
±0.115A
±0.073A
0.8A
200mW
80mW
–55 to 150°C
–55 to 150°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25°C unless otherwise stated)
SOT23 CERAMIC
(LCC1 PACKAGE)
21
0.51 ± 0.10
(0.02 ± 0.004) 0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.
54 ±
0.
13
(
0
.
10 ±
0.
005)
0.
76
± 0.
1
5
(
0
.
03 ±
0.
00
6)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
PAD 1 – Gate
Underside View
PAD 2 – Source PAD 3 – Drain