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2N7002

器件描述:N-CHANNEL ENHANCEMENT-MODE MOSFET
器件厂商:CENTRAL [Central Semiconductor Corp]
文件大小:80.02KB,共2页
Sponsor by e络盟
器件资料摘要:
56
Central
Semiconductor Corp.
TM
SOT-23 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N7002
type is a N-Channel Field Effect Transistor,
manufactured by the N-Channel DMOS
Process, designed for high speed pulsed
amplifier and driver applications.
Marking Code is 702.
MAXIMUM RATINGS (T
A
=25
o
C)
SYMBOL UNITS
Drain-Source Voltage V
DS
60 V
Drain-Gate Voltage V
DG
60 V
Gate-Source Voltage V
GS
40 V
Continuous Drain Current (T
C
=25
o
C) I
D
115 mA
Continuous Drain Current (T
C
=100
o
C) I
D
75 mA
Continuous Source Current (Body Diode) I
S
115 mA
Maximum Pulsed Drain Current I
DM
800 mA
Maximum Pulsed Source Current I
SM
800 mA
Power Dissipation P
D
350 mW
Operating and Storage
Junction Temperature T
J
,T
stg
-55 to +150
o
C
Thermal Resistance Θ
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
GSSF
V
GS
=20V 100 nA
I
GSSR
V
GS
=-20V -100 nA
I
DSS
V
DS
=60V, V
GS
=0 1.0 µA
I
DSS
V
DS
=60V, V
GS
=0, T
A
=125
o
C 500 µA
I
D(ON)
V
DS
≥ 2V
DS(ON)
, V
GS
=10V 500 mA
BV
DSS
I
D
=10µA 60 105 V
V
GS(th)
V
DS
=V
GS
, I
D
=250µA 1.0 2.1 2.5 V
V
DS(ON)
V
GS
=10V, I
D
=500mA 3.75 V
V
DS(ON)
V
GS
=5.0V, I
D
=50mA 1.5 V
r
DS(ON)
V
GS
=10V, I
D
=500mA 3.7 7.5 Ω
2N7002
N-CHANNEL
ENHANCEMENT-MODE
MOSFET