FEATURES
DMOS Transistors (N-Channel)
Dimensions in inches and (millimeters)
.016 (0.4)
.05
6
(
1
.43
)
.037(0.95) .037(0.95)
max
.
.004 (
0
.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
3
12
Top View
.102 (2.6)
.007 (
0
.175)
.045 (
1
.15
)
.118 (3.0)
.0
52 (
1
.33
)
.005 (
0
.125)
.094 (2.4)
.037 (
0
.95
)

Case: SOT-23 Plastic Package
Weight: approx. 0.008 g
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C

ambient temperature unless otherwise specified
Pin configuration
1 = Gate, 2 = Source, 3 = Drain
SOT-23
4/98
2N7002
Marking
S72
Inverse Diode
Symbol Value Unit
Drain-Source Voltage V
DSS
60 V
Drain-Gate Voltage V
DGS
60 V
Gate-Source-Voltage (pulsed) V
GS
±20 V
Drain Current (continuous) I
D
250 mA
Power Dissipation at T
C
= 50 °C P
tot
0.310
1)
W
Junction Temperature T
j
150 °C
Storage Temperature Range T
S
–55 to +150 °C
1)
Ceramic Substrate 0.7mm; 2.5 cm
2
area.
Symbol Value Unit
Max. Forward Current (continuous)
at T
amb
= 25 °C
I
F
0.3 A
Forward Voltage Drop (typ.)
at V
GS
= 0, I
F
= 0.3 A, T
j
= 25 °C
V
F
0.85 V
♦ High input impedance
♦ High-speed switching
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No minority carrier storage time
♦ CMOS logic compatible input
♦ No thermal runaway
♦ No secondary breakdown