DS11303 Rev. K-2 1of 3 2N7002
2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
c183 Low On-Resistance: R
DS(ON)
c183 Low Gate Threshold Voltage
c183 Low Input Capacitance
c183 Fast Switching Speed
c183 Low Input/Output Leakage
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate VoltageR
GS
c163 1.0Mc87 VDGR 60 V
Gate-Source Voltage Continuous
Pulsed
V
GSS
±20
±40
V
Drain Current (Note 1) Continuous
Continuous @ 100°C
Pulsed
I
D
115
73
800
mA
Total Power Dissipation (Note 1)
Derating above T
A
= 25°C
P
d
200
1.60
mW
mW/°C
Thermal Resistance, Junction to Ambient Rc113JA 625 °C/W
Operating and Storage Temperature Range Tj,TSTG -55 to +150 °C
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Short duration test pulse used to minimize self-heating effect.
c183 Case: SOT-23, Molded Plastic
c183 Terminals: Solderable per MIL-STD-202,
Method 208
c183 Terminal Connections: See Diagram
c183 Marking: K72, K7A
c183 Weight: 0.008 grams (approx.)
Mechanical Data
A
E
J
L
M
B C
H
G
D
K
TOP VIEW
D
SG
SOT-23
Dim Min Max
A 0.37 0.51
B 1.19 1.40
C 2.10 2.50
D 0.89 1.05
E 0.45 0.61
G 1.78 2.05
H 2.65 3.05
J 0.013 0.15
K 0.89 1.10
L 0.45 0.61
M 0.076 0.178
All Dimensions in mm