2N7000
器件描述:N-Channel Enhancement-Mode MOS Transistor
文件大小:25.36KB,共2页
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器件资料摘要:
N-Channel Enhancement-Mode
MOS Transistor
2N7000 / BS170L
DESCRIPTION
The 2N7000 utilizes Calogic’s vertical DMOS technology. The
device is well suited for switching applications where B
V
of
60V and low on resistance (under 5 ohms) are required. The
2N7000 is housed in a plastic TO-92 package.
ORDERING INFORMATION
Part Package Temperature Range
2N7000 Plastic TO-92 -55
o
C to +150
o
C
BS170L Plastic TO-92 -55
o
C to +150
o
C
X2N7000 Sorted Chips in Carriers -55
o
C to +150
o
C
CORPORATION
1
2
3
TO-92
(TO-226AA)
BOTTOM VIEW
1
2
3
1
2
3
SOURCE
GATE
DRAIN
1
2
3
2N7000
PIN CONFIGURATION
PRODUCT SUMMARY
P/N
V(BR)DSS
(V)
rDS(ON)
(Ω)
ID
(A)
2N7000 60 5 0.2
BS170 60 5 0.5
CD5
BOTTOM VIEW
1
2
3
1
2
3
DRAIN
GATE
SOURCE
3
2
1
BS170L