1Motorola Small–Signal Transistors, FETs and Diodes Device Data
C0084C0077C0079C0083 C0070C0069C0084 C0084C0114C0097C0110C0115C0105C0115C0116C0111C0114
N–Channel — Enhancement
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain Source Voltage V
DSS
60 Vdc
Drain–Gate Voltage (R
GS
= 1.0 MΩ) V
DGR
60 Vdc
Gate–Source Voltage
— Continuous
— Non–repetitive (t
p
≤ 50 µs)
V
GS
V
GSM
±20
±40
Vdc
Vpk
Drain Current
Continuous
Pulsed
I
D
I
DM
200
500
mAdc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Operating and Storage Temperature Range T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
θJA
357 °C/W
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
T
L
300 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
= 10 µAdc)
V
(BR)DSS
60 — Vdc
Zero Gate Voltage Drain Current
(V
DS
= 48 Vdc, V
GS
= 0)
(V
DS
= 48 Vdc, V
GS
= 0, T
J
= 125°C)
I
DSS
—
—
1.0
1.0
µAdc
mAdc
Gate–Body Leakage Current, Forward
(V
GSF
= 15 Vdc, V
DS
= 0)
I
GSSF
— –10 nAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
V
GS(th)
0.8 3.0 Vdc
Static Drain–Source On–Resistance
(V
GS
= 10 Vdc, I
D
= 0.5 Adc)
(V
GS
= 4.5 Vdc, I
D
= 75 mAdc)
r
DS(on)
—
—
5.0
6.0
Ohm
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 0.5 Adc)
(V
GS
= 4.5 Vdc, I
D
= 75 mAdc)
V
DS(on)
—
—
2.5
0.45
Vdc
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N7000/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
 Motorola, Inc. 1997
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
1
2
3
C0050C0078C0055C0048C0048C0048
Motorola Preferred Device
3 DRAIN
2
GATE
1 SOURCE
REV 3