7-5
2N7000
N-Channel Enhancement-Mode
Vertical DMOS FET
Package Options
Note: See Package Outline section for dimensions.
Ordering Information
Order Number / Package
BV
DSS
/R
DS(ON)
I
D(ON)
BV
DGS
(max) (min) TO-92
60V 5.0Ω 75mA 2N7000
Features
nn Free from secondary breakdown
nn Low power drive requirement
nn Ease of paralleling
nn Low C
ISS
and fast switching speeds
nn Excellent thermal stability
nn Integral Source-Drain diode
nn High input impedance and high gain
nn Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
Applications
nn Motor controls
nn Converters
nn Amplifiers
nn Switches
nn Power supply circuits
nn Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage BV
DSS
Drain-to-Gate Voltage BV
DGS
Gate-to-Source Voltage ± 30V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
TO-92
S G D