CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures.
Copyright © Harris Corporation 1995
3-1
Semiconductor
Package
JEDEC TO-204AA
BOTTOM VIEW
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
2N6975 TO-204AA
2N6976 TO-204AA
2N6977 TO-204AA
2N6978 TO-204AA
NOTE: When ordering, use the entire part number.
COLLECTOR
(FLANGE)
EMITTER
GATE
C
E
G
Features
• 5A, 400V and 500V
•V
CE(ON)
2V
•T
FI
1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
Applications
• Power Supplies
• Motor Drives
• Protection Circuits
Description
The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel
enhancement-mode insulated gate bipolar transistors (IGBTs)
designed for high-voltage, low on-dissipation applications such as
switching regulators and motor drivers. These types can be operated
directly from low-power integrated circuits.
April 1995
2N6975, 2N6976,
2N6977, 2N6978
5A, 400V and 500V N-Channel IGBTs
Absolute Maximum Ratings T
C
= +25
o
C, Unless Otherwise Specified.
2N6975/2N6977
(Note 1)
2N6976/2N6978
(Note 1) UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
CES
400 500 V
Collector-Gate Voltage (R
GE
= 1MΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
CGR
400 500 V
Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
CES(REV.)
5 5
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GE
±20 ±20 V
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
5 5 A
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
10 10 A
Power Dissipation Total at T
C
= +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
100 100 W
Power Dissipation Derating T
C
> +25
o
C 0.8 0.8 W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to +150 -55 to +150
o
C
NOTE:
1. JEDEC registered value.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641
4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762
4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690
4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606
4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951
4,969,027
File Number 2297.2