(SEE REVERSE SIDE) R0


2N696


NPN SILICON TRANSISTOR


JEDEC TO-39 CASE






DESCRIPTION
The CENTRAL SEMICONDUCTOR 2N696 is a Silicon NPN Transistor, mounted in a hermetically sealed metal package,
designed for general purpose amplifier and switching applications.

MAXIMUM RATINGS (T
A
=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage V
CBO
60 V

Collector-Emitter Voltage V
CER
40 V
Emitter-Base Voltage V
EBO
5.0 V
Power Dissipation P
D
0.6 W
Power Dissipation (T
C
=25°C) P
D
2.0 W
Operating and Storage
Junction Temperature T
J
,T
stg
-65 to +200 °C
Thermal Resistance Θ
JA
292 °C/W
Thermal Resistance Θ
JC
87.5 °C/W

ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)

SYMBOL TEST CONDITIONS MIN MAX UNITS
I
CBO
V
CB
=30V 1.0 µA
I
CBO
V
CB
=30V, T
A
=150°C 100 µA
BV
CBO
I
C
=100µA 60 V
BV
CER
I
C
=100mA, R
BE
=10Ω 40 V
BV
EBO
I
E
=100µA 5.0 V
V
CE(SAT)
I
C
=150mA, I
B
=15mA 1.5 V
V
BE(SAT)
I
C
=150mA, I
B
=15mA 1.3 V
h
FE
V
CE
=10V, I
C
=150mA 20 60
f
T
V
CE
=10V, I
C
=50mA, f=20MHz 40 MHz
C
ob
V
CB
=10V, I
E
=0, f=1.0MHz 35 pF