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厂商索引:A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-S-T-U-V-W-X-Y-Z

2N6849

器件描述:P.CHANNEL POWER MOSFETs
器件厂商:SEME-LAB [Seme LAB]
文件大小:24.99KB,共2页
Sponsor by e络盟
器件资料摘要:
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
P–CHANNEL
POWER MOSFETs
V
DSS
- 100V
I
D(cont)
- 6.5A
R
DS(on)
0.30G57
Prelim. 9/00
LAB
SEME
2N6849
V
GS
Gate – Source Voltage*
V
DS
Drain – Source Voltage*
V
DG
Drain – Gate Voltage (R
GS
= 20kG57)*
I
D
Continuous Drain Current @ T
C
= 25°C*
@ T
C
= 100°C*
I
DM
Pulsed Drain Current
2*
E
AS
Single Pulse Avalanche Current
3
P
D
Power Dissipation @ T
C
= 25°C*
Linear Derating Factor*
T
J
, T
STG
Operating and Storage Junction Temperature Range*
R
G71JC
Thermal Resistance Junction to Case*
R
G71JA
Thermal Resistance Junction to Ambient
±20V
-100V
-100V
–6.5A
–4.1A
–25A
500mJ
25W
0.2W/°C
–55 to +150°C
5°C/W
175°C/W
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
G30G2EG38G39
G28G30G2EG30 G33 G35 G29
G6DG61G78G2E
G31G32G2EG37G30
G28G30G2EG35 G30 G30 G29
G6DG69G6EG2E
G34 G2EG31G39G20G28G30G2EG31G36G35G29
G34 G2EG39G35G20G28G30G2EG31G39G35G29
G38G2EG38G39G20G28G30G2EG33G35G29
G39G2EG34G30G20G28G30G2EG33G37G29
G37G2EG37G35G20G28G30G2EG33G30G35G29
G38G2EG35G31G20G28G30G2EG33G33G35G29
G37G2EG37G35G20G28G30G2EG33G30G35G29
G38G2EG35G31G20G28G30G2EG33G33G35G29
G64G69G61G2E
G30G2EG36G36G20G28G30G2EG30G32G36G29
G31G2EG31G34G20G28G30G2EG30G34G35G29
G30G2EG37G31G20G28G30G2EG30G32G38G29
G30G2EG38G36G20G28G30G2EG30G33G34G29
G32G2EG35G34
G28G30G2EG31 G30 G30 G29
G35G2EG30G38G20G28G30G2EG32G30G30G29
G74G79 G70 G2E
G34G35GB0
G31
G32
G33
Pin 1 = Emitter
Underside View
Pin 2 = Base Pin 3 = Collector
FEATURES
Single pulse avalanche energy rated
SOA is power dissipation limited
Nanosecond switching speeds
Linear transfer characteristics
High input impedance