Product Summary
Part Number BVDSS RDS(on) ID
JANTX2N6845
JANTXV2N6845
Features:
a73 Avalanche Energy Rating
a73 Dynamic dv/dt Rating
a73 Simple Drive Requirements
a73 Ease of Paralleling
a73 Hermetically Sealed
P-CHANNEL
Provisional Data Sheet No. PD-9.552B
-100 Volt, 0.60Ω HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
JANTX2N6845
JANTXV2N6845
[REF:MIL-PRF-19500/563]
[GENERIC:IRFF9120]
HEXFET
®
POWER MOSFET
Absolute Maximum Ratings
Parameter JANTX2N6845, JANTXV2N6845 Units
I
D
@ V
GS
= -10V, T
C
= 25°C Continuous Drain Current -4.0
I
D
@ V
GS
= -10V, T
C
= 100°C Continuous Drain Current -2.6
I
DM
Pulsed Drain Current a140 -16
P
D
@ T
C
= 25°C Max. Power Dissipation 20 W
Linear Derating Factor 0.16 W/K a144
V
GS
Gate-to-Source Voltage ±20 V
dv/dt Peak Diode Recovery dv/dt a142 -5.0
V/ns
T
J
Operating Junction -55 to 150
T
STG
Storage Temperature Range
Lead Temperature 300
(0.063 in. (1.6mm) from
case for 10.5 seconds)
Weight 0.98 (typical) g
o
C
A
-4.0A0.60Ω-100V