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Prelim. 6/99
2N6798
N-CHANNEL ENHANCEMENT
MODE TRANSISTOR
FEATURES
•V
(BR)DSS
= 200V
•I
D
= 5.5A
•R
DSON
= 0.40c87
V
DS
Drain–Source Voltage
V
GS
Gate–Source Voltage
I
D
Drain Current Continuous T
C
= 25°C
T
C
= 100°C
I
DM
Drain Current Pulsed
I
A
Avalanche Current
P
D
Total Device Dissipation @ T
C
= 25°C
T
C
= 100°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
R
c113JC
Thermal Resistance Junction to Case
R
c113JC
Thermal Resistance Junction to Ambient
T
L
Maximum Lead Temperature 1.5mm from Case for
10 secs.
200V
±20V
5.5A
3.5A
22A
3.1A
25W
10W
–55 to +150°C
5.0°CW
175°CW
300°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–39 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
PIN 1 – Source
Underside View
PIN 2 – Gate PIN 3 – Drain
0.89
(0.035)
max.
12.70
(0.500)
min.
6.10 (0.240)
6.60 (0.260)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
ty p .
45
1
2
3