2N6782LCC4
10/99
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V
GS
Gate – Source Voltage
I
D
Continuous Drain Current (V
GS
= 10V , T
case
= 25°C)
I
D
Continuous Drain Current (V
GS
= 10V , T
case
= 100°C)
I
DM
Pulsed Drain Current
1
P
D
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
E
AS
Single Pulse Avalanche Energy
2
dv/dt Peak Diode Recovery
3
T
J
, T
stg
Operating and Storage Temperature Range
Surface Temperature ( for 5 sec).
±20V
3.1A
2.0A
12A
11W
0.09W/°C
68mJ
5.5V/ns
-55 to +150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
FEATURES
SURFACE MOUNT
SMALL FOORPRINT
HERMETICALLY SEALED
DYNAMIC dv/dt RATING
AVALANCHE ENERGY RATING
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
LCC4
Notes
1) Pulse Test: Pulse Width GA3 300G6Ds, G64GA32%
2) @ V
DD
= 50V , L GB3 570G6DH , R
G
= 25G57 , Peak I
L
= 14A , Starting T
J
= 25°C
3) @ I
SD
GA3 14A , di/dt GA3 140A/G6Ds , V
DD
GA3 BV
DSS
, T
J
GA3 150°C , Suggested R
G
= 7.5G57
V
DSS
100V
I
D(cont)
3.1A
R
DS(on)
0.6G57
1.39 (0.055)
1.15 (0.045)
0.76 (0.030)
0.51 (0.020)
1.39 (0.055)
1.02 (0.040)
15 161312 14
34567
17
18
1
2
11
10
8
9
9.14 (0.360)
8.64 (0.340)1.27 (0.050)
1.07 (0.040)
≈ 2.16 (0.085)
7.62 (0.300)
7.12 (0.280)
1.65 (0.065)
1.40 (0.055)
0.33 (0.013)
0.08 (0.003)
0.43 (0.017)
0.18 (0.007
Rad.
Rad.
MOSFET TRANSISTOR PINS
GATE BASE 4,5
DRAIN COLLECTOR 1,2,15,16,17,18
SOURCE EMITTER 6,7,8,9,10,11,12,13