PNP
SILICON P
LANAR
MEDIUM POW
E
R TRANSISTORS
I
S
S
UE
1
MA
RCH 94
F
E
A
T
URE
S
*
4
0

V
olt
V
CEO
*
G
ai
n
of 50
at I
C
=

1 Am
p
*P
to
t
=1 Watt
A
B
S
O
L
U
T
E
MA
X
I
MU
M R
A
T
I
N
G
S
.
PA
RA
M
E
TE
R
SYM
BO
L
2
N
6
7
2
6
2
N
6727
U
N
I
T
Co
l
l
e
c
t
or
-
B
as
e V
o
l
t
age
V
CB
O
-4
0
-
5
0
V
C
o
lle
c
t
o
r
-E
m
i
tte
r
V
o
lta
g
e
V
CEO
-3
0
-
4
0
V
E
m
itte
r-B
a
s
e
V
o
lta
g
e
V
EBO
-5
V
Peak Pu
l
s
e Cu
r
r
e
n
t
I
CM
-2
A
Con
t
i
n
uo
us
C
o
l
l
e
ct
or
Cur
r
e
nt
I
C
-1
A
P
o
w
e
r D
i
s
s
ip
a
t
io
n
a
t
T
am
b
= 25
C
P
tot
1W
O
p
er
at
i
n
g
and
St
or
ag
e Tem
p
er
at
ure Rang
e
T
j
:T
st
g
-
55 t
o
+
200

C
EL
ECTRI
C
AL
CHARACTERI
STI
CS (
a
t

T
am
b
= 25
C

un
l
e
ss otherw
i
s
e
st
ated)
.
PA
RA
M
E
TE
R
S
Y
M
BO
L
2
N
6726
2N
6727
U
N
I
T
CO
N
D
I
TI
O
N
S.
MI
N
.
MA
X
.
MI
N
.
MA
X
.
C
o
lle
c
t
o
r
-B
a
s
e
Br
eakdo
w
n
Vo
l
t
age
V
(
BR)
CB
O
-4
0
-
5
0
V
I
C
=-
1
m
A,
I
E
=0
C
o
lle
c
t
o
r
-E
m
i
tte
r
Br
eakdo
w
n
Vo
l
t
age
V
(
BR)
CEO
-3
0
-
4
0
V
I
C
=
-
10m
A
,
I
B
=0
*
Em
i
t
t
e
r
-
B
a
se
Br
eakdo
w
n
Vo
l
t
age
V
(
BR)
E
B
O
-5
-5
V
I
E
=-
1
m
A,
I
C
=0
C
o
lle
c
t
o
r
C
u
t-O
f
f
C
u
rre
n
t
I
CB
O
-0
.1
-0
.1
µ
A
µ
A
V
CB
=
-
40V,
I
E
=0
V
CB
=
-
50V,
I
E
=0
Em
i
t
t
e
r
C
u
t
-
O
f
f
C
u
rre
n
t
I
EBO
-0
.1
-0
.1
µ
A
V
EB
=-
5
V
,
I
C
=0
C
o
lle
c
t
o
r
-E
m
i
tte
r
S
a
tu
ra
tio
n
V
o
lt
a
g
e
V
C
E
(
sat
)
-0
.5
-0
.5
V
I
C
=-
1
A
,
I
B
=
-
100m
A
*
B
a
se
-E
m
i
t
t
e
r
T
u
rn
-O
n
Vol
t
age
V
BE
(
o
n
)
-1
.2
-1
.2
V
I
C
=
-1
A
,
V
CE
=-
1
V
*
St
at
i
c
For
w
ar
d
Cur
r
e
nt
Tr
a
n
sf
e
r
Ra
t
i
o
h
FE
55 60 50
250
55 60 50
250
I
C
=
-
10m
A
,
V
CE
=-
1
V
*
I
C
=
-
100m
A
,
V
CE
=-
1
V
*
I
C
=-
1
A
,
V
CE
=-
1
V
*
Transi
t
i
o
n
Fr
eq
uen
c
y
f
T
50
500
50
500
M
H
z
I
C
=
-
50m
A
,
V
CE
=
-
10V
C
o
lle
c
t
o
r
B
a
s
e
Capac
i
t
a
n
c
e
C
CB
30
30
p
F
V
CE
=
-
10
V
,
f
=
1M
H
z
E-
L
i
ne
T
O
92 Co
m
p
at
i
b
l
e
2N6726 2N6727
3-
8
C
B
E