NPN SILICON PLANAR MEDIUM POW
E
R TRANSISTOR
ISS
U
E 1
MA
RCH 94
FEATU
R
E
S
*
8
0

V
olt
V
CEO
*
G
ain of 100
at I
C
= 350
mA
*P
to
t
=1 Watt
ABSOL
U
TE M
A
XI
M
U
M

RATI
NGS.
PA
RA
M
ETER
S
Y
M
B
O
L
V
A
L
U
E
U
N
I
T
Col
l
ec
t
o
r
-
B
as
e Vol
t
age
V
CBO
100
V
C
o
ll
e
c
t
o
r-E
m
i
tt
er V
o
lt
ag
e
V
CEO
80
V
Em
i
t
t
e
r-
B
a
se
Vo
l
t
age
V
EB
O
5V
Peak Pu
l
s
e Cu
r
r
ent
I
CM
2A
C
o
nt
i
n
u
o
us C
o
l
l
ect
o
r
Cu
r
r
ent
I
C
1A
Pow
er
D
i
ssi
pat
i
on at

T
am
b
= 2
5

C
P
to
t
1W
O
p
er
a
t
i
n
g
and
St
or
age Tem
p
er
a
t
ur
e

R
a
ng
e
T
j
:T
st
g
-
55 t
o
+
200

C
EL
ECTRI
C
AL

CHARACTERI
STI
CS (
a
t

T
am
b
= 25 C
un
l
e
ss o
t
herw
i
s
e
st
ated)
.
PA
RA
M
ETER
S
Y
M
BO
L
M
I
N
.
T
Y
P
.
M
AX.
U
N
I
T
C
O
N
D
I
T
I
O
N
S
.
Col
l
ec
t
o
r
-
B
as
e
Br
eakdow
n V
o
l
t
ag
e
V
(
BR)
CBO
100
V
I
C
=10
0
µ
A,
I
E
=0
C
o
ll
e
c
t
o
r-E
m
i
tt
er
Br
eakdow
n V
o
l
t
ag
e
V
(
BR)
CE
O
80
V
I
C
=10
m
A
,
I
B
=0
*
E
m
itte
r
-
B
a
s
e
Br
eakdow
n V
o
l
t
ag
e
V
(
BR)
E
B
O
5V
I
E
=1m
A
,
I
C
=0
C
o
lle
c
to
r
C
u
t-
O
f
f
Cu
r
r
e
nt
I
CBO
0.
1
µ
A
V
CB
=8
0
V
,
I
E
=0
E
m
it
t
e
r
C
u
t-
O
f
f
C
u
rren
t
I
EB
O
10
µ
A
V
EB
=5V,
I
C
=0
C
o
ll
e
c
t
o
r-E
m
i
tt
er
S
a
tu
rati
o
n
V
o
lt
a
g
e
V
CE(
s
at
)
0.
35
V
I
C
=35
0
m
A
,
I
B
=35
m
A
*
B
a
se-
E
m
i
t
t
er
Tur
n-
O
n
Vo
l
t
ag
e
V
BE(
o
n
)
1.
0
V
I
C
=
3
50
m
A
,
V
CE
=2V
*
S
t
a
t
ic
F
o
rw
ard
C
u
rren
t
Tr
ans
f
er
R
a
t
i
o
h
FE
100 100
30
0
I
C
=10
m
A
,
V
CE
=2V
*
I
C
=35
0
m
A
,
V
CE
=2V*
Tr
ansi
t
i
on
Fr
equ
e
nc
y
f
T
50
50
0
M
Hz
I
C
=20
0
m
A
,
V
CE
=5V
f
=
20M
H
z
Col
l
ec
t
o
r
-
B
as
e
Ca
pa
c
i
t
a
n
c
e
C
CB
20
pF
V
CB
=1
0
V
,
f
=
1
M
Hz
*M
eas
u
r
ed
un
der

pu
l
s
ed
c
o
nd
i
t
i
o
ns.
Pu
l
s
e w
i
d
t
h
=
300
µ
s.
D
u
ty
cy
c
l
e

≤
2%
E-
L
i
ne
TO
92 C
o
m
p
at
i
b
l
e
2N6731
3-10
C
B
E