2N6714
器件描述:NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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器件资料摘要:
Continental Device India Limited Data Sheet Page 1 of 3
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Designed for General purpose Medium Power Amplifier and Switching Circuits.
ABSOLUTE MAXIMUM RATINGS
Rating Symbol 2N6714 2N6715 2N6716 Units
Collector-Emitter Voltage V
CEO
30 40 60 V
Collector-Base Voltage V
CBO
40 50 60 V
Emitter-Base Voltage V
EBO
- 5.0 - V
Collector Current – Continuous I
C
- 1.5 - A
Power Dissipation @ Ta=25ºC P
D
- 850 - mW
Operating And Storage Junction T
j
,T
stg
-55 to +150 º C
Temperature Range
2N6714
2N6715
2N6716
1 = EMITTER
2 = BASE
3 = COLLECTOR
1 2 3
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
E B
C
TO-237 Plastic Package