2N6668
器件描述：SILICON PNP POWER DARLINGTON TRANSISTOR
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：68.87KB，共4页
Sponsor by e络盟器件资料摘要：
2N6668
SILICON PNP POWER DARLINGTON TRANSISTOR
a73 SGS-THOMSON PREFERRED SALESTYPE
a73 PNP DARLINGTON
a73 INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
a73 GENERAL PURPOSE SWITCHING
a73 GENERAL PURPOSE SWITCHING AND
AMPLIFIER
INTERNAL SCHEMATIC DIAGRAM
July 1997
R1(typ) = 8 kΩ R2(typ) = 120 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 80 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 10 A
I
CM
Collector Peak Current 15 A
I
B
Base Current 250 mA
Ptot Total Dissipation at Tc ≤ 25
o
C6W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP type voltage and current values are negative.
1
2
3
TO-220
1/4
SILICON PNP POWER DARLINGTON TRANSISTOR
a73 SGS-THOMSON PREFERRED SALESTYPE
a73 PNP DARLINGTON
a73 INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
a73 GENERAL PURPOSE SWITCHING
a73 GENERAL PURPOSE SWITCHING AND
AMPLIFIER
INTERNAL SCHEMATIC DIAGRAM
July 1997
R1(typ) = 8 kΩ R2(typ) = 120 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCBO Collector-Base Voltage (IE = 0) 80 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 10 A
I
CM
Collector Peak Current 15 A
I
B
Base Current 250 mA
Ptot Total Dissipation at Tc ≤ 25
o
C6W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP type voltage and current values are negative.
1
2
3
TO-220
1/4