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2N6661

器件描述:N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR
器件厂商:SEME-LAB [Seme LAB]
文件大小:17.09KB,共2页
Sponsor by e络盟
器件资料摘要:
* Pulse width limited by maximum junction temperature.
Prelim. 6/94
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
2N6661
N–CHANNEL
ENHANCEMENT MODE
MOS TRANSISTOR
FEATURES
Switching Regulators
Converters
Motor Drivers
V
DS
Drain – Source Voltage
V
GS
Gate – Source Voltage
I
D
Drain Current @ T
CASE
= 25°C
I
D
Drain Current @ T
CASE
= 100°C
I
DM
Pulsed Drain Current *
P
D
Power Dissipation @ T
CASE
= 25°C
P
D
Power Dissipation @ T
CASE
= 100°C
T
j
Operating Junction Temperature Range
T
stg
Storage Temperature Range
T
L
Lead Temperature (
1
/
16
” from case for 10 sec.)
90V
±20V
0.9A
0.7A
3A
6.25W
2.5W
–55 to 150°C
–55 to 150°C
300°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (T
CASE
= 25°C unless otherwise stated)
TO–39 METAL PACKAGE
Underside View
PIN 1 – Source
PIN 2 – Gate
PIN 3 – Drain
CASE – Drain
LAB
SEME
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45˚
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3