7-3
2N6660
2N6661
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
nn Free from secondary breakdown
nn Low power drive requirement
nn Ease of paralleling
nn Low C
ISS
and fast switching speeds
nn Excellent thermal stability
nn Integral Source-Drain diode
nn High input impedance and high gain
nn Complementary N- and P-channel devices
Applications
nn Motor controls
nn Converters
nn Amplifiers
nn Switches
nn Power supply circuits
nn Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage BV
DSS
Drain-to-Gate Voltage BV
DGS
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
BV
DSS
/R
DS(ON)
I
D(ON)
BV
DGS
(max) (min) TO-39
60V 3.0Ω 1.5A 2N6660
90V 4.0Ω 1.5A 2N6661
Order Number / Package
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Options
Note: See Package Outline section for dimensions.
TO-39
Ordering Information
D
G
S
Case: DRAIN