PNP SILICON PLANAR MEDIUM POW
E
R TRANSISTOR
ISS
U
E 1
MA
RCH 94
FEATU
R
E
S
*
3
5
0
V
olt V
CEO
*
G
ain of 15
at
I
C
=
-100
mA
ABSOL
U
TE M
A
XI
M
U
M

RATI
NGS.
PARAM
ETE
R
SYM
BO
L
V
ALUE
U
N
I
T
Co
l
l
e
c
t
or
-
B
ase Vol
t
age
V
CB
O
-
350
V
C
o
lle
c
t
o
r
-E
m
i
tte
r
V
o
lta
g
e
V
CEO
-
350
V
E
m
itte
r-B
a
s
e
V
o
lta
g
e
V
EBO
-5
V
Base
Cu
r
r
en
t
I
B
-
250
m
A
Con
t
i
n
uou
s Co
l
l
e
ct
or
Cur
r
e
nt
I
C
-
500
m
A
P
o
w
e
r D
i
s
s
ip
a
t
io
n
a
t
T
am
b
=
25
C
P
tot
680
m
W
O
p
er
at
i
n
g
and
St
or
ag
e T
e
m
p
er
at
u
r
e Rang
e
T
j
:T
st
g
-
55 t
o
+
200

C
EL
ECTRI
C
AL

CHARACTERI
STI
CS (
a
t

T
am
b
= 25 C
un
l
e
ss o
t
herw
i
s
e
st
ated)
.
PARAM
ETE
R
SYM
BO
L
M
I
N
.
M
AX.
UN
I
T
CON
D
I
T
I
O
N
S
.
Co
l
l
e
c
t
or
-
B
ase
Br
eakdo
w
n
Vo
l
t
age
V
(B
R
)
C
B
O
-
350
V
I
C
=-
100
µ
A,
I
E
=0
C
o
lle
c
t
o
r
-E
m
i
tte
r
Br
eakdo
w
n
Vo
l
t
age
V
(B
R
)
C
E
O
-
350
V
I
C
=-
1m
A
,
I
B
=0
*
E
m
itte
r-B
a
s
e
B
r
e
a
k
d
o
w
n
Vol
t
age
V
(
B
R)
EBO
-5
V
I
E
=-
1
0
µ
A,
I
C
=0
C
o
lle
c
t
o
r
C
u
t-O
f
f C
u
rre
n
t
I
CB
O
-5
0
n
A
V
CB
=-
250V,
I
E
=0
E
m
it
te
r C
u
t
-
O
ff C
u
r
r
e
n
t
I
EB
O
-5
0
n
A
V
EB
=-
4
V
,
I
C
=0
C
o
lle
c
t
o
r
-E
m
i
tte
r
S
a
tu
r
a
tio
n
V
o
lta
g
e
V
CE(
sa
t
)
-0
.3
-0
.3
5
-0
.5
-1
.0
V V V V
I
C
=-
10m
A
,
I
B
=-
1
m
A*
I
C
=-
20m
A
,
I
B
=-
2
m
A*
I
C
=-
30m
A
,
I
B
=-
3
m
A*
I
C
=-
50m
A
,
I
B
=-
5
m
A*
Base
-
E
m
i
t
t
er

S
a
tu
r
a
tio
n
V
o
lta
g
e
V
BE(
sa
t
)
-0
.8
0
-0
.8
5
-0
.9
0
V V V
I
C
=-
10m
A
,
I
B
=-
1
m
A*
I
C
=-
20m
A
,
I
B
=-
2
m
A*
I
C
=-
30m
A
,
I
B
=-
3
m
A*
B
a
s
e
-E
m
i
t
t
e
r
T
u
r
n
-O
n
Vol
t
age
V
BE(
on)
-
2
.
0
V
I
C=
-
100m
A,
V
CE
=
-
10V*
St
at
i
c
For
w
ard Cu
r
r
e
n
t
T
r
ansf
er
R
a
t
i
o
h
FE
20 30 30 20 15
200 200
I
C
=-
1m
A
,
V
CE
=
-
10V
I
C
=-
10m
A
,
V
CE
=
-
10V
*
I
C
=-
30m
A
,
V
CE
=
-
10V
*
I
C
=-
50m
A
,
V
CE
=
-
10V
*
I
C
=-
100m
A
,
V
CE
=
-
10V
*
T
r
ansi
t
i
o
n
Frequ
e
ncy
f
T
40
M
H
z
I
C
=-
10m
A
,
V
CE
=
-
20V
,

f
=
20M
H
z
*M
eas
u
r
ed
un
der

pu
l
s
ed
c
o
nd
i
t
i
o
ns.
Pu
l
s
e w
i
d
t
h
=
300
µ
s.
D
u
ty
cy
c
l
e

≤
2%
E-
Li
n
e
T
O
92 Co
m
p
ati
b
l
e
2N6520
3-
4
C
B
E