©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
2N65
20
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
Electrical Characteristics T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -350 V
V
CEO
Collector-Emitter Voltage -350 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -500 mA
I
B
Base Current -250 mA
P
C
Collector Power Dissipation 0.625 W
Derate above 25 5 mW/°C
T
J
Junction Temperature 50 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CBO
Collector-Base Breakdown Voltage I
C
= -100µA, I
E
=0 -350 V
BV
CEO
* Collector-Emitter Breakdown Voltage I
C
= -1mA, I
B
=0 -350 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
= -10µA, I
C
=0 -5 V
I
CBO
Collector Cut-off Current V
CB
= -250V, I
E
=0 -50 nA
I
EBO
Emitter Cut-off Current V
EB
= -4V, I
C
=0 -50 nA
h
FE
* DC Current Gain V
CE
= -10V, I
C
= -1mA
V
CE
= -10V, I
C
= -10mA
V
CE
= -10V, I
C
= -30mA
V
CE
= -10V, I
C
= -50mA
V
CE
= -10V, I
C
= -100mA
20
30
30
20
15
200
200
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
I
C
= -50mA, I
B
= -5mA
-0.30
-0.35
-0.50
-1
V
V
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
-0.75
-0.85
-0.90
V
V
V
V
BE
(on) Base-Emitter On Voltage V
CE
= -10V, I
C
= -100mA -2 V
f
T
* Current Gain Bandwidth Product V
CE
= -20V, I
C
= -10mA, f=20MHz 40 200 MHz
C
ob
Output Capacitance V
CB
= -20V, I
E
=0, f=1MHz 6 pF
C
EB
Emitter-Base Capacitance V
EB
= -0.5V, I
C
=0, f=1MHz 100 pF
t
ON
Turn On Time V
BE
(off)= -2V, V
CC
= -100V
I
C
= -50mA, I
B1
= -10mA
200 ns
t
OFF
Turn Off Time V
CC
= -100V, I
C
= -50mA
I
B1
=I
B2
= -10mA
3.5 ns
2N6520
High Voltage Transistor
• Collector-Emitter Voltage: V
CEO
= -350V
• Collector Dissipation: P
C
(max)=625mW
• Complement to 2N6517
1. Emitter 2. Base 3. Collector
TO-92
1