©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
2N65
17
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
a
=25°C unless otherwise noted
• Refer to 2N6515 for graphs
Electrical Characteristics T
a
=25°C unless otherwise noted
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 350 V
V
CEO
Collector-Emitter Voltage 350 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current 500 mA
P
C
Collector Power Dissipation 625 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CEO
* Collector-Emitter Breakdown Voltage I
C
=1mA, I
B
=0 350 V
BV
CBO
Collector-Base Breakdown Voltage I
C
=100µA, I
E
=0 350 V
BV
EBO
Emitter-Base Breakdown Voltage I
E
=10µA, I
C
=0 6 V
I
CBO
Collector Cut-off Current V
CB
=250V, I
E
=0 50 nA
I
EBO
Emitter Cut-off Current V
EB
=5V, I
C
=0 50 nA
h
FE
* DC Current Gain I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=30mA, V
CE
=10V
I
C
=50mA, V
CE
=10V
I
C
=100mA, V
CE
=10V
20
30
30
20
15
200
200
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA
I
C
=20mA, I
B
=2mA
I
C
=30mA, I
B
=3mA
I
C
=50mA, I
B
=5mA
0.3
0.35
0.5
1
V
V
V
V
V
BE
(sat) Base-Emitter Saturation Voltage I
C
=10mA, I
B
=1mA
I
C
=20mA, I
B
=2mA
I
C
=30mA, I
B
=3mA
0.75
0.85
0.9
V
V
V
C
ob
Output Capacitance V
CB
=20V, I
E
=0, f=1MHz 6 pF
f
T
* Current Gain Bandwidth Product I
C
=10mA, V
CE
=20V,
f=20MHz
40 200 MHz
V
BE
(on) Base Emitter On Voltage I
C
=100mA, V
CE
=10V 2 V
2N6517
High Voltage Transistor
• Collector-Emitter Voltage: V
CEO
=350V
• Collector Dissipation: P
C
(max)=625mW
• Complement to 2N6520
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1. Emitter 2. Base 3. Collector
TO-92
1