2N6517
器件描述：NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
器件厂商：ZETEX [Zetex Semiconductors]
文件大小：27.11KB，共1页
Sponsor by e络盟器件资料摘要：
NPN SI
LICON P
LANAR
MEDIUM POW
E
R TRANSISTOR
I
S
S
UE
1
MA
RCH 94
F
E
A
T
URE
S
*
3
5
0
V
olt V
CEO
*
G
ai
n
of 15
at I
C
=
1
00mA
A
B
S
O
L
U
T
E
MA
X
I
MU
M R
A
T
I
N
G
S
.
P
A
RAM
E
T
E
R
SYM
BO
L
V
ALUE
U
N
I
T
Co
l
l
e
c
t
or
-
B
as
e V
o
l
t
age
V
CB
O
350
V
C
o
lle
c
t
o
r
-E
m
i
tte
r
V
o
lta
g
e
V
CEO
350
V
E
m
itte
r-B
a
s
e
V
o
lta
g
e
V
EBO
6V
Bas
e
C
u
r
r
e
n
t
I
B
250
m
A
Con
t
i
n
uo
us
C
o
l
l
e
ct
or
Cur
r
e
nt
I
C
500
m
A
P
o
w
e
r D
i
s
s
ip
a
t
io
n
a
t
T
am
b
= 25
C
P
tot
680
m
W
O
p
er
at
i
n
g
and
St
or
ag
e Tem
p
er
at
ure Rang
e
T
j
:T
st
g
-
55 t
o
+
200
C
EL
ECTRI
C
AL
CHARACTERI
STI
CS (
a
t
T
am
b
= 25
C
un
l
e
ss otherw
i
s
e
st
ated)
.
P
A
RAM
E
T
E
R
SYM
BO
L
M
I
N
.
M
AX.
UN
I
T
CON
D
I
T
I
O
N
S
.
Co
l
l
e
c
t
or
-
B
as
e
Br
eakdo
w
n
Vo
l
t
age
V
(
B
R)
CB
O
350
V
I
C
=100
µ
A,
I
E
=0
C
o
lle
c
t
o
r
-E
m
i
tte
r
Br
eakdo
w
n
Vo
l
t
age
V
(
B
R)
CE
O
350
V
I
C
=1m
A,
I
B
=0
*
E
m
itte
r-B
a
s
e
B
r
e
a
k
d
o
w
n
Vol
t
age
V
(
B
R
)
EBO
5V
I
E
=1
0
µ
A,
I
C
=0
C
o
lle
c
t
o
r
C
u
t-O
f
f C
u
rre
n
t
I
CB
O
50
nA
V
CB
=250V,
I
E
=0
E
m
it
te
r C
u
t
-
O
ff C
u
rr
e
n
t
I
EB
O
50
nA
V
EB
=5
V,
I
C
=0
C
o
lle
c
t
o
r
-E
m
i
tte
r
S
a
tu
ra
tio
n
V
o
lt
a
g
e
V
CE(
sa
t
)
0.
3
0.
35
0.
5
1.
0
V V V V
I
C
=10m
A
,
I
B
=1
m
A
*
I
C
=20m
A
,
I
B
=2
m
A
*
I
C
=30m
A
,
I
B
=3
m
A
*
I
C
=50m
A
,
I
B
=5
m
A
*
Bas
e
-
E
m
i
t
t
er
S
a
tu
ra
tio
n
V
o
lt
a
g
e
V
BE(
sa
t
)
0.
80
0.
85
0.
90
V V V
I
C
=10m
A
,
I
B
=1
m
A
*
I
C
=20m
A
,
I
B
=2
m
A
*
I
C
=30m
A
,
I
B
=3
m
A
*
B
a
se
-E
m
i
t
t
e
r
T
u
rn
-O
n
Vol
t
age
V
BE(
on)
2.
0
V
I
C
=
100m
A
,
V
CE
=10V
*
St
at
i
c
For
w
ar
d
Cu
r
r
e
n
t
Transf
er
R
a
t
i
o
h
FE
20 30 30 20 15
200 200
I
C
=1m
A,
V
CE
=
10V
I
C
=10m
A
,
V
CE
=
10V*
I
C
=30m
A
,
V
CE
=
10V*
I
C
=50m
A
,
V
CE
=
10V*
I
C
=100m
A
,
V
CE
=
10V*
T
r
a
n
si
t
i
on
F
r
e
que
n
c
y
f
T
40
M
H
z
I
C
=10m
A
,
V
CE
=
20V,
f
=
20M
H
z
*
M
e
a
s
ur
e
d
u
n
d
e
r
pul
s
e
d
co
ndi
t
i
on
s.
P
u
l
s
e
w
i
dt
h=3
0
0
µ
s.
D
u
t
y
c
y
cl
e
≤
2%
E-
L
i
ne
T
O
92 Co
m
p
at
i
b
l
e
2N6517
3-
3
C
B
E
LICON P
LANAR
MEDIUM POW
E
R TRANSISTOR
I
S
S
UE
1
MA
RCH 94
F
E
A
T
URE
S
*
3
5
0
V
olt V
CEO
*
G
ai
n
of 15
at I
C
=
1
00mA
A
B
S
O
L
U
T
E
MA
X
I
MU
M R
A
T
I
N
G
S
.
P
A
RAM
E
T
E
R
SYM
BO
L
V
ALUE
U
N
I
T
Co
l
l
e
c
t
or
-
B
as
e V
o
l
t
age
V
CB
O
350
V
C
o
lle
c
t
o
r
-E
m
i
tte
r
V
o
lta
g
e
V
CEO
350
V
E
m
itte
r-B
a
s
e
V
o
lta
g
e
V
EBO
6V
Bas
e
C
u
r
r
e
n
t
I
B
250
m
A
Con
t
i
n
uo
us
C
o
l
l
e
ct
or
Cur
r
e
nt
I
C
500
m
A
P
o
w
e
r D
i
s
s
ip
a
t
io
n
a
t
T
am
b
= 25
C
P
tot
680
m
W
O
p
er
at
i
n
g
and
St
or
ag
e Tem
p
er
at
ure Rang
e
T
j
:T
st
g
-
55 t
o
+
200
C
EL
ECTRI
C
AL
CHARACTERI
STI
CS (
a
t
T
am
b
= 25
C
un
l
e
ss otherw
i
s
e
st
ated)
.
P
A
RAM
E
T
E
R
SYM
BO
L
M
I
N
.
M
AX.
UN
I
T
CON
D
I
T
I
O
N
S
.
Co
l
l
e
c
t
or
-
B
as
e
Br
eakdo
w
n
Vo
l
t
age
V
(
B
R)
CB
O
350
V
I
C
=100
µ
A,
I
E
=0
C
o
lle
c
t
o
r
-E
m
i
tte
r
Br
eakdo
w
n
Vo
l
t
age
V
(
B
R)
CE
O
350
V
I
C
=1m
A,
I
B
=0
*
E
m
itte
r-B
a
s
e
B
r
e
a
k
d
o
w
n
Vol
t
age
V
(
B
R
)
EBO
5V
I
E
=1
0
µ
A,
I
C
=0
C
o
lle
c
t
o
r
C
u
t-O
f
f C
u
rre
n
t
I
CB
O
50
nA
V
CB
=250V,
I
E
=0
E
m
it
te
r C
u
t
-
O
ff C
u
rr
e
n
t
I
EB
O
50
nA
V
EB
=5
V,
I
C
=0
C
o
lle
c
t
o
r
-E
m
i
tte
r
S
a
tu
ra
tio
n
V
o
lt
a
g
e
V
CE(
sa
t
)
0.
3
0.
35
0.
5
1.
0
V V V V
I
C
=10m
A
,
I
B
=1
m
A
*
I
C
=20m
A
,
I
B
=2
m
A
*
I
C
=30m
A
,
I
B
=3
m
A
*
I
C
=50m
A
,
I
B
=5
m
A
*
Bas
e
-
E
m
i
t
t
er
S
a
tu
ra
tio
n
V
o
lt
a
g
e
V
BE(
sa
t
)
0.
80
0.
85
0.
90
V V V
I
C
=10m
A
,
I
B
=1
m
A
*
I
C
=20m
A
,
I
B
=2
m
A
*
I
C
=30m
A
,
I
B
=3
m
A
*
B
a
se
-E
m
i
t
t
e
r
T
u
rn
-O
n
Vol
t
age
V
BE(
on)
2.
0
V
I
C
=
100m
A
,
V
CE
=10V
*
St
at
i
c
For
w
ar
d
Cu
r
r
e
n
t
Transf
er
R
a
t
i
o
h
FE
20 30 30 20 15
200 200
I
C
=1m
A,
V
CE
=
10V
I
C
=10m
A
,
V
CE
=
10V*
I
C
=30m
A
,
V
CE
=
10V*
I
C
=50m
A
,
V
CE
=
10V*
I
C
=100m
A
,
V
CE
=
10V*
T
r
a
n
si
t
i
on
F
r
e
que
n
c
y
f
T
40
M
H
z
I
C
=10m
A
,
V
CE
=
20V,
f
=
20M
H
z
*
M
e
a
s
ur
e
d
u
n
d
e
r
pul
s
e
d
co
ndi
t
i
on
s.
P
u
l
s
e
w
i
dt
h=3
0
0
µ
s.
D
u
t
y
c
y
cl
e
≤
2%
E-
L
i
ne
T
O
92 Co
m
p
at
i
b
l
e
2N6517
3-
3
C
B
E