High Voltage Transistors
MAXIMUM RATINGS
Rating Symbol 2N6515
2N6517
2N6520 Unit
Collector–Emitter Voltage V
CEO
250 350 Vdc
Collector–Base Voltage V
CBO
250 350 Vdc
Emitter–Base Voltage
2N6515, 2N6516, 2N6517
2N6519, 2N6520
V
EBO
6.0
5.0
Vdc
Base Current I
B
250 mAdc
Collector Current –
Continuous
I
C
500 mAdc
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage
Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
JA
200 °C/W
Thermal Resistance, Junction to Case R
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0) 2N6515
2N6517, 2N6520
V
(BR)CEO
250
350
–
–
Vdc
Collector–Base Breakdown Voltage
(I
C
= 100 µAdc, I
E
= 0 ) 2N6515
2N6517, 2N6520
V
(BR)CBO
250
350
–
–
Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10 µAdc, I
C
= 0) 2N6515, 2N6517
2N6520
V
(BR)EBO
6.0
5.0
–
–
Vdc
1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
ON Semiconductor
 Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 3
1 Publication Order Number:
2N6515/D
NPN
2N6515
2N6517
PNP
2N6520
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Voltage and current are negative
for PNP transistors
COLLECTOR
3
2
BASE
1
EMITTER
COLLECTOR
3
2
BASE
1
EMITTER
NPN
PNP