2N6515
器件描述:High Voltage Transistor 625mW
文件大小:427.63KB,共6页
Sponsor by e络盟
器件资料摘要:
Features
l Through Hole Package
l 150
o
C Junction Temperature
l Voltage and Current are negative for PNP transistors
Mechanical Data
l Case: TO-92, Molded Plastic
l Polarity: indicated as above.
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Voltage 2N6515
2N6519
2N6517, 2N6520
V
CEO
250
300
350
V
Collector-Base Voltage 2N6515
2N6519
2N6517, 2N6520
V
CBO
250
300
350
V
Emitter-Base Voltage
2N6515-6517
2N6519-6520
V
EBO 6.0
5.0
V
Base Current IB 250 mA
Collector Current(DC) IC 500 mA
Power Dissipation@TA=25
o
C
P
d
625
5.0
W
mW/
o
C
Power Dissipation@TC=25
o
C
P
d
1.5
12
W
mW/
o
C
Thermal Resistance, Junction to
Ambient Air
200
o
C/W
Thermal Resistance, Junction to Case 83.3
o
C/W
Operating & Storage Temperature Tj, TSTG -55~150
o
C
NPN
2N6515, 2N6517
PNP
2N6519, 2N6520
High Voltage
Transistor
625mW
Pin Configuration
Bottom View C B E
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.46 4.70
C .500 --- 12.7 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
G .095 .105 2.42 2.67
A E
B
C
D
G
DIMENSIONS
TO-92
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