2N6487
器件描述：COMPLEMENTARY SILICON POWER TRANSISTORS
器件厂商：STMICROELECTRONICS [STMicroelectronics]
厂商主页：http://www.st.com/
文件大小：52.24KB，共4页
Sponsor by e络盟器件资料摘要：
2N6487
2N6488/2N6490
COMPLEMENTARY SILICON POWER TRANSISTORS
a73 STMicroelectronics PREFERRED
SALESTYPES
a73 COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The 2N6487 and 2N6488 are silicon
epitaxial-base NPN transistors in Jedec TO-220
plastic package.
They are inteded for use in power linear and low
frequency switching applications.
The 2N6487 complementary type is 2N6490.
INTERNAL SCHEMATIC DIAGRAM
April 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN 2N6487 2N6488
PNP 2N6490
V
CBO
Collector-Base Voltage (I
E
= 0) 70 90 V
V
CEX Collector-Emitter Voltage (VBE=-1.5V,RBE=100Ω)
70 90 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 60 80 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
I
C
Collector Current 15 A
IB Base Current 5 A
P
tot Total Dissipation at Tc ≤ 25
o
C 75 W
Tstg Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
®
1/4
2N6488/2N6490
COMPLEMENTARY SILICON POWER TRANSISTORS
a73 STMicroelectronics PREFERRED
SALESTYPES
a73 COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The 2N6487 and 2N6488 are silicon
epitaxial-base NPN transistors in Jedec TO-220
plastic package.
They are inteded for use in power linear and low
frequency switching applications.
The 2N6487 complementary type is 2N6490.
INTERNAL SCHEMATIC DIAGRAM
April 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN 2N6487 2N6488
PNP 2N6490
V
CBO
Collector-Base Voltage (I
E
= 0) 70 90 V
V
CEX Collector-Emitter Voltage (VBE=-1.5V,RBE=100Ω)
70 90 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 60 80 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
I
C
Collector Current 15 A
IB Base Current 5 A
P
tot Total Dissipation at Tc ≤ 25
o
C 75 W
Tstg Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220
®
1/4