The RF Line
C0080
C0080
. . . designed primarily for wideband large–signal output amplifier stages in the
225 to 400 MHz frequency range.
• Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
Output Power = 60 Watts over 225 to 400 MHz Band
Minimum Gain = 7.8 dB @ 400 MHz
• Built–In Matching Network for Broadband Operation Using Double
Match Technique
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS*
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
33 Vdc
Collector–Base Voltage V
CBO
60 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Total Device Dissipation @ T
C
= 25°C (1)
Derate above 25°C
P
D
146
0.83
Watts
W/°C
Storage Temperature Range T
stg
–65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
1.2 °C/W
ELECTRICAL CHARACTERISTICS* (T
C
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 50 mAdc, I
B
= 0)
V
(BR)CEO
33 — — Vdc
Collector–Emitter Breakdown Voltage
(I
C
= 50 mAdc, V
BE
= 0)
V
(BR)CES
60 — — Vdc
Emitter–Base Breakdown Voltage
(I
E
= 5.0 mAdc, I
C
= 0)
V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
I
CBO
— — 2.0 mAdc
NOTE: (continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
* Indicates JEDEC Registered Data.

60 W, 225 to 400 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
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by 2N6439/DSEMICONDUCTOR TECHNICAL DATA
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