NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
2N6427 MMBT6427
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 40 V
V
EBO
Emitter-Base Voltage 12 V
I
C
Collector Current - Continuous 1.2 A
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Characteristic Max Units
2N6427 *MMBT6427
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
Rθ
JC
Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
2N6427 / MMBT6427
C
B
E
TO-92
C
B
E
SOT-23
Mark: 1V
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
 1997 Fairchild Semiconductor Corporation