Darlington Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
40 Vdc
Collector–Base Voltage V
CBO
40 Vdc
Emitter–Base Voltage V
EBO
12 Vdc
Collector Current — Continuous I
C
500 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
JA
200 °C/W
Thermal Resistance, Junction to Case R
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 10 mAdc, V
BE
= 0)
V
(BR)CEO
40 — — Vdc
Collector–Base Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
V
(BR)CBO
40 — — Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
12 — — Vdc
Collector Cutoff Current
(V
CE
= 25 Vdc, I
B
= 0)
I
CES
— — 1.0 Adc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
I
CBO
— — 50 nAdc
Emitter Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
I
EBO
— — 50 nAdc
1. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%.
ON Semiconductor
 Semiconductor Components Industries, LLC, 2001
February, 2001 – Rev.1
1 Publication Order Number:
2N6426/D
2N6426
2N6427
*ON Semiconductor Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
*
1
2
3
COLLECTOR 3
BASE
2
EMITTER 1