2N6401
器件描述：Silicon Controlled Rectifiers Reverse Blocking Thyristors
器件厂商：ONSEMI [ON Semiconductor]
文件大小：74.47KB，共8页
Sponsor by e络盟器件资料摘要：
Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 2
1 Publication Order Number:
2N6400/D
2N6400 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half–wave silicon gate–controlled, solid–state devices are needed.
• Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• Device Marking: Logo, Device Type, e.g., 2N6400, Date Code
*MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage (Note 1.)
(T
J
= 40 to 125°C, Sine Wave
50 to 60 Hz; Gate Open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
V
DRM,
V
RRM
50
100
200
400
600
800
Volts
On-State RMS Current
(180° Conduction Angles; T
C
= 100°C)
I
T(RMS)
16 A
Average On-State Current
(180° Conduction Angles; T
C
= 100°C)
I
T(AV)
10 A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 90°C)
I
TSM
160 A
Circuit Fusing (t = 8.3 ms) I
2
t 145 A
2
s
Forward Peak Gate Power
(Pulse Width ≤ 1.0 µs, T
C
= 100°C)
P
GM
20 Watts
Forward Average Gate Power
(t = 8.3 ms, T
C
= 100°C)
P
G(AV)
0.5 Watts
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µs, T
C
= 100°C)
I
GM
2.0 A
Operating Junction Temperature Range T
J
–40 to
+125
°C
Storage Temperature Range T
stg
–40 to
+150
°C
*Indicates JEDEC Registered Data.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
2N6400 TO220AB 500/Box
2N6401 TO220AB
2N6402 TO220AB
http://onsemi.com
500/Box
500/Box
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4 Anode
2N6403 TO220AB 500/Box
2N6404 TO220AB 500/Box
2N6405 TO220AB 500/Box
TO–220AB
CASE 221A
STYLE 3
1
2
3
4
MARKING
DIAGRAM
YY WW
640x
x = 0, 1, 2, 3, 4 or 5
YY = Year
WW = Work Week
April, 2001 – Rev. 2
1 Publication Order Number:
2N6400/D
2N6400 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half–wave silicon gate–controlled, solid–state devices are needed.
• Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• Device Marking: Logo, Device Type, e.g., 2N6400, Date Code
*MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off–State Voltage (Note 1.)
(T
J
= 40 to 125°C, Sine Wave
50 to 60 Hz; Gate Open)
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
V
DRM,
V
RRM
50
100
200
400
600
800
Volts
On-State RMS Current
(180° Conduction Angles; T
C
= 100°C)
I
T(RMS)
16 A
Average On-State Current
(180° Conduction Angles; T
C
= 100°C)
I
T(AV)
10 A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 90°C)
I
TSM
160 A
Circuit Fusing (t = 8.3 ms) I
2
t 145 A
2
s
Forward Peak Gate Power
(Pulse Width ≤ 1.0 µs, T
C
= 100°C)
P
GM
20 Watts
Forward Average Gate Power
(t = 8.3 ms, T
C
= 100°C)
P
G(AV)
0.5 Watts
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µs, T
C
= 100°C)
I
GM
2.0 A
Operating Junction Temperature Range T
J
–40 to
+125
°C
Storage Temperature Range T
stg
–40 to
+150
°C
*Indicates JEDEC Registered Data.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
2N6400 TO220AB 500/Box
2N6401 TO220AB
2N6402 TO220AB
http://onsemi.com
500/Box
500/Box
K
G
A
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
4 Anode
2N6403 TO220AB 500/Box
2N6404 TO220AB 500/Box
2N6405 TO220AB 500/Box
TO–220AB
CASE 221A
STYLE 3
1
2
3
4
MARKING
DIAGRAM
YY WW
640x
x = 0, 1, 2, 3, 4 or 5
YY = Year
WW = Work Week