2N6394
器件描述：SCRs 12 AMPERES RMS 50 thru 800 VOLTS
器件厂商：MOTOROLA [Motorola, Inc]
文件大小：112.19KB，共6页
Sponsor by e络盟器件资料摘要：
1
Motorola Thyristor Device Data
C0083C0105C0108C0105C0099C0111C0110 C0067C0111C0110C0116C0114C0111C0108C0108C0101C0100 C0082C0101C0099C0116C0105C0102C0105C0101C0114C0115
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies.
• Glass Passivated Junctions with Center Gate Geometry for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High
Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
*MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted.)
Rating Symbol Value Unit
Peak Repetitive Forward and Reverse Blocking Voltage
(1)
(Gate Open, T
J
= –40 to 125°C) 2N6394
2N6395
2N6397
2N6398
2N6399
V
DRM
, V
RRM
50
100
400
600
800
Volts
RMS On–State Current (T
C
= 90°C) (All Conduction Angles) I
T(RMS)
12 Amps
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= 125°C)
I
TSM
100 Amps
Circuit Fusing (t = 8.3 ms) I
2
t 40 A
2
s
Forward Peak Power P
GM
20 Watts
Forward Average Gate Power P
G(AV)
0.5 Watt
Forward Peak Gate Current I
GM
2 Amps
Operating Junction Temperature Range T
J
–40 to +125 °C
Storage Temperature Range T
stg
–40 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
2 °C/W
*Indicates JEDEC Registered Data.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N6394/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1999
REV 1
C0050C0078C0054C0051C0057C0052
C0116C0104C0114C0117
C0050C0078C0054C0051C0057C0057
CASE 221A-07
(TO-220AB)
STYLE 3
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
KA
G
Motorola preferred devices
Motorola Thyristor Device Data
C0083C0105C0108C0105C0099C0111C0110 C0067C0111C0110C0116C0114C0111C0108C0108C0101C0100 C0082C0101C0099C0116C0105C0102C0105C0101C0114C0115
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies.
• Glass Passivated Junctions with Center Gate Geometry for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High
Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
*MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted.)
Rating Symbol Value Unit
Peak Repetitive Forward and Reverse Blocking Voltage
(1)
(Gate Open, T
J
= –40 to 125°C) 2N6394
2N6395
2N6397
2N6398
2N6399
V
DRM
, V
RRM
50
100
400
600
800
Volts
RMS On–State Current (T
C
= 90°C) (All Conduction Angles) I
T(RMS)
12 Amps
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= 125°C)
I
TSM
100 Amps
Circuit Fusing (t = 8.3 ms) I
2
t 40 A
2
s
Forward Peak Power P
GM
20 Watts
Forward Average Gate Power P
G(AV)
0.5 Watt
Forward Peak Gate Current I
GM
2 Amps
Operating Junction Temperature Range T
J
–40 to +125 °C
Storage Temperature Range T
stg
–40 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
2 °C/W
*Indicates JEDEC Registered Data.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N6394/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1999
REV 1
C0050C0078C0054C0051C0057C0052
C0116C0104C0114C0117
C0050C0078C0054C0051C0057C0057
CASE 221A-07
(TO-220AB)
STYLE 3
SCRs
12 AMPERES RMS
50 thru 800 VOLTS
KA
G
Motorola preferred devices