2N6388
SILICON NPN POWER DARLINGTON TRANSISTOR
a73 STMicroelectronics PREFERRED
SALESTYPE
a73 NPN DARLINGTON
a73 HIGH CURRENT CAPABILITY
a73 INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
DESCRIPTION
The device is a silicon epitaxial-base NPN power
transistor in monolithic Darlington configuration
mounted in Jedec TO-220 plastic package.
It is inteded for use in low and medium frequency
power applications.
®
INTERNAL SCHEMATIC DIAGRAM
April 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
B
= 0) 80 V
V
CEV
Collector-Emitter Voltage (V
BE
= -1.5V) 80 V
VCER Collector-Emitter Voltage (R
BE ≤ 100Ω)
80 V
VCEO Collector-Emitter Voltage (IB = 0) 80 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
I
C
Collector Current 10 A
I
CM
Collector Peak Current 15 A
I
B
Base Current 0.25 A
P
tot Total Dissipation at Tc ≤ 25
o
C 65 W
Tstg Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C

R1 Typ. = 10 KΩ R2 Typ. = 160 Ω
1
2
3
TO-220
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