2N6348A
器件描述:Silicon Bidirectional Thyristors
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器件资料摘要:
Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 1
1 Publication Order Number:
2N6344A/D
C0050C0078C0054C0051C0052C0052C0065C0044 C0050C0078C0054C0051C0052C0056C0065C0044
C0050C0078C0054C0051C0052C0057C0065
Preferred Device
C0084C0114C0105C0097C0099C0115
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in all Four Quadrants
• For 400 Hz Operation, Consult Factory
• 8 Ampere Devices Available as 2N6344 thru 2N6349
• Device Marking: Logo, Device Type, e.g., 2N6344A, Date Code
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
*Peak Repetitive Off–State Voltage
(1)
(Gate Open, T
J
= –40 to +110°C,
Sine Wave 50 to 60 Hz, Gate Open)
2N6344A, 2N6348A
2N6349A
V
DRM,
V
RRM
600
800
Volts
*On–State RMS Current
(Full Cycle Sine Wave 50 to 60 Hz)
(T
C
= +80°C)
(T
C
= +95°C)
I
T(RMS)
12
6.0
A
*Peak Non–repetitive Surge Current
(One Full Cycle, 60 Hz, T
C
= +80°C)
Preceded and followed by rated current
I
TSM
100 A
Circuit Fusing Consideration (t = 8.3 ms) I
2
t 59 A
2
s
*Peak Gate Power (T
C
= +80°C,
Pulse Width = 2.0 µs)
P
GM
20 Watts
*Average Gate Power
(T
C
= +80°C, t = 8.3 ms)
P
G(AV)
0.5 Watt
*Peak Gate Current
(Pulse Width = 2.0 µs; T
C
= +80°C)
I
GM
2.0 A
*Peak Gate Voltage
(Pulse Width = 2.0 µs; T
C
= +80°C)
V
GM
C003410 Volts
*Operating Junction Temperature Range T
J
–40 to
+125
°C
*Storage Temperature Range T
stg
–40 to
+150
°C
*Indicates JEDEC Registered Data.
(1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
Device Package Shipping
ORDERING INFORMATION
2N6344A TO220AB 500/Box
2N6348A TO220AB
2N6349A TO220AB
TO–220AB
CASE 221A
STYLE 4
1
2
3
4
PIN ASSIGNMENT
1
2
3 Gate
Main Terminal 1
Main Terminal 2
4 Main Terminal 2
http://onsemi.com
500/Box
500/Box
MT1
G
MT2
Preferred devices are recommended choices for future use
and best overall value.