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2N6344

器件描述:Silicon Bidirectional Thyristors
器件厂商:ONSEMI [ON Semiconductor]
厂商主页:http://www.onsemi.com
文件大小:87.86KB,共8页
Sponsor by e络盟
器件资料摘要:
 Semiconductor Components Industries, LLC, 1999
March, 2000 – Rev. 1
1 Publication Order Number:
2N6344/D
C0050C0078C0054C0051C0052C0052C0044 C0050C0078C0054C0051C0052C0057
Preferred Device
C0084C0114C0105C0097C0099C0115
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full–wave silicon gate controlled solid–state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in all Four Quadrants
• For 400 Hz Operation, Consult Factory
• Device Marking: Logo, Device Type, e.g., 2N6344, Date Code
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
*Peak Repetitive Off–State Voltage
(1)
(T
J
= –40 to +110°C, Sine Wave 50 to
60 Hz, Gate Open) 2N6344
2N6349
V
DRM,
V
RRM
600
800
Volts
*On–State RMS Current
(T
C
= +80°C)
Full Cycle Sine Wave 50 to 60 Hz
(T
C
= +90°C)
I
T(RMS)
8.0
4.0
Amps
*Peak Non–Repetitive Surge Current
(One Full Cycle, Sine Wave 60 Hz,
T
C
= +25°C)
Preceded and followed by rated current
I
TSM
100 Amps
Circuit Fusing Consideration (t = 8.3 ms) I
2
t 40 A
2
s
*Peak Gate Power
(T
C
= +80°C, Pulse Width = 2 µs)
P
GM
20 Watts
*Average Gate Power
(T
C
= +80°C, t = 8.3 ms)
P
G(AV)
0.5 Watt
*Peak Gate Current
(T
C
= +80°C, Pulse Width = 2.0 µs)
I
GM
2.0 Amps
*Peak Gate Voltage
(T
C
= +80°C, Pulse Width = 2.0 µs)
V
GM
10 Volts
*Operating Junction Temperature Range T
J
–40 to
+125
°C
*Storage Temperature Range T
stg
–40 to
+150
°C
(1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TRIACS
8 AMPERES RMS
600 thru 800 VOLTS
Device Package Shipping
ORDERING INFORMATION
2N6344 TO220AB 500/Box
2N6349 TO220AB
TO–220AB
CASE 221A
STYLE 4
1
2
3
4
PIN ASSIGNMENT
1
2
3 Gate
Main Terminal 1
Main Terminal 2
4 Main Terminal 2
http://onsemi.com
500/Box
MT1
G
MT2
Preferred devices are recommended choices for future use
and best overall value.