MSC1323.PDF 10-25-99
2N6304
DESCRIPTION:
Designed primarily for use in High Gain, low noise general purpose UHF amplifiers.
ABSOLUTE MAXIMUM RATINGS ( Tcase = 25 °C)
Symbol Parameter Value Unit
V CEO Collector-Emitter Voltage 15 Vdc
V CBO Collector-Base Voltage 30 Vdc
V EB O Emitter-Base Voltage 3.5 Vdc
I C Collector Current 50 mA
Thermal Data
P D Total Device Dissipation @ T A = 25ºC
Derate above 25ºC
200
1.14
mWatts
mW/ º C
1
2
3
4
1. Emitter
2. Base
3. Collector
4. Case
TO-72
Features
• Silicon RF NPN, TO-72, UHF general purpose Low Noise
Transistor
• Noise Figure = 5.0 dB ( typ) @ f = 450 MHz
• High F T - 1.4 GHz (min) @ IC = 10 mAdc
• Maximum Available Gain = 14 dB (min) @ f = 500 MHz
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855