2N6255
器件描述：RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
器件厂商：MICROSEMI [Microsemi Corporation]
文件大小：231.91KB，共4页
Sponsor by e络盟器件资料摘要：
MSC1306.PDF 10-25-99
2N6255
DESCRIPTION:
Silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS ( Tcase = 25 °C)
Symbol Parameter Value Unit
V CEO Collector-Emitter 18 Vdc
V CBO Collector-Base Voltage 36 Vdc
V EBO Emitter-Base Voltage 4.0 Vdc
I C Collector Current 1 A
Thermal Data
P D Total Device Dissipation @ T A = 25ºC
Derate above 25ºC
5.0
28.5
Watts
mW/ º C
1. Emitter
2. Base
3. Collector
TO-39
Features
• Silicon NPN, To-39 packaged VHF Transistor
• 3.0 Watt Power Output @ 175 MHz
• Power Gain, G PE = 7.8 dB
• Efficiency = 50%
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
2N6255
DESCRIPTION:
Silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS ( Tcase = 25 °C)
Symbol Parameter Value Unit
V CEO Collector-Emitter 18 Vdc
V CBO Collector-Base Voltage 36 Vdc
V EBO Emitter-Base Voltage 4.0 Vdc
I C Collector Current 1 A
Thermal Data
P D Total Device Dissipation @ T A = 25ºC
Derate above 25ºC
5.0
28.5
Watts
mW/ º C
1. Emitter
2. Base
3. Collector
TO-39
Features
• Silicon NPN, To-39 packaged VHF Transistor
• 3.0 Watt Power Output @ 175 MHz
• Power Gain, G PE = 7.8 dB
• Efficiency = 50%
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS