2N6261
器件描述:HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR
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器件资料摘要:
90V
80V
85V
90V
7V
4A
2A
50W
0.200°C
–65 to 200°C
7/00
2N6261
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (with base open)
V
CER(sus)
External Base – Emitter (R
BE
) = 100G57)
V
CEV(sus)
Collector – Emitter Voltage (with base reverse biased)
V
EBO
Emitter to Base Voltage
IC Continuous Collector Current
I
B
Continuous Base Current
P
D
Total Power Dissipation at T
case
= 25°C
Derate above 25°C
T
j,
T
stg
, Operating and Storage Junction Temperature Range
24.33 (0.958) 24.43 (0.962)
14.48 (0.570) 14.99 (0.590)
3.68
(0.145) rad.
max.
3.61 (0.142)
3.86 (0.145)
rad.
0.71 (0.028) 0.86 (0.034)
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
11.94 (0.470) 12.70 (0.500)
HOMETAXIAL-BASE
MEDIUM POWER SILICON
NPN TRANSISTOR
FEATURES
• f
T
= 800 kHz at 0.2A
Maximum Safe-area of operation curves
for dc and pulse operation.
V
CEV(sus)
= 90V min
Low Saturation Voltage:
V
CE(sat = 1.0V at
I
C = 0.5A)
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
PIN 1 — Base PIN 2 — Emitter Case is Collector.
APPLICATIONS
Power Switching Circuits
Series and shunt-regulator driver and
output stages
High-fidelity amplifers
Solenoid Drivers
MECHANICAL DATA
Dimensions in mm(inches)
TO–66
THERMAL CHARACTERISTICS
RG71JC Thermal Resistance, Junction to Case 3.5 °C/W
In accordance with JEDEC registration data format