DISCRETE POWER & SIGNAL
TECHNOLOGIES
2N6076
SILICON PNP SMALL SIGNAL TRANSISTOR
BVCEO . . . . 25 V (Min)
hFE . . . . 100 (Min) @ VCE = 10 V, IC = 10 mA
ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES
Storage Temperature -55 Degrees C to 150 Degrees C
Operating Junction Temperature 150 Degrees C
POWER DISSIPATION (NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C 625 mW
VOLTAGES & CURRENT
V CEO Collector to Emitter 25 V
V CBO Collector to Base 25 V
V EBO Emitter to Base 5 V
I C Collector Current 500 mA
1 2 3
B C E
1 2 3
LOGOXYY
2N
6076
0.175 - 0.185
(4.450 - 4.700)
0.500
(12.70) MIN
0.175 - 0.185
(4.450 - 4.700)
SEATING
PLANE
0.095 - 0.105
(2.413 - 2.667)
0.045 - 0.055
(1.143- 1.397)
0.016 - 0.021
(0.410- 0.533)
0.135 - 0.145
(3.429 - 3.683)
SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS
BVCBO Collector to Base Voltage 25 V IC = 100 uA
BVCEO Collector to Emitter Voltage 25 V IC = 10 mA
BVEBO Emitter to Base Voltage 5 V IE = 10 uA
ICBO Collector Cutoff Current 100 nA VCB = 25 V
10 uA VCB = 25 V , T=+100°C
ICES Collector Cutoff Current 100 nA VCE = 25 V
IEBO Emitter Cutoff Current 100 uA VEB = 3.0 V
hFE DC Current Gain 100 500 VCE = 10 V IC = 10 mA
VCE(sat) Collector-Emitter Saturation Voltage 0.25 V IC = 10mA IB = 1.0mA
VBE(sat) Base-Emitter Saturation Voltage 0.8 V IC = 10mA IB = 1.0mA
VBE(on) Base -Emitter On Voltage 0.5 1.2 V VCE = 10 V IC = 10mA
ELECTRICAL CHARACTERISTICS (25 Degrees C Ambient Temperature unless otherwise stated)
1998 Fairchild Semiconductor Corporation 2n6076.ppt6894 revA