2N6059
SILICON NPN POWER DARLINGTON TRANSISTOR
a73 SGS-THOMSON PREFERRED SALESTYPE
a73 HIGH GAIN
a73 NPN DARLINGTON
a73 HIGH CURRENT
a73 HIGH DISSIPATION
a73 INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
a73 LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N6059 is a silicon epitaxial-base NPN
transistor in monolithic Darlington configuration
mounted in Jedec TO-3 metal case.
It is inteded for use in power linear and low
frequency switching applications.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
= 0) 100 V
VCEX Collector-Emitter Voltage (VBE = -1.5V) 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 100 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 12 A
I
CM
Collector Peak Current 20 A
I
B
Base Current 0.2 A
Ptot Total Dissipation at Tc ≤ 25
o
C 150 W
T
stg
Storage Temperature -65 to 200
o
C
Tj Max. Operating Junction Temperature 200
o
C
For PNP types voltage and current values are negative.
R1 Typ. = 6 KΩ R2 Typ. = 55 Ω
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