2N6071A
器件资料摘要：
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1 Publication Order Number:
2N6071/D
C0050C0078C0054C0048C0055C0049C0065C0047C0066 C0083C0101C0114C0105C0101C0115
Preferred Device
C0083C0101C0110C0115C0105C0116C0105C0118C0101 C0071C0097C0116C0101 C0084C0114C0105C0097C0099C0115
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
• Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
• Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
• Blocking Voltages to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Device Marking: Device Type, e.g., 2N6071A, Date Code
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
*Peak Repetitive Off-State Voltage
(1)
(T
J
= C004240 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6071A,B
2N6073A,B
2N6075A,B
V
DRM,
V
RRM
200
400
600
Volts
*On-State RMS Current (T
C
= 85°C)
Full Cycle Sine Wave 50 to 60 Hz
I
T(RMS)
4.0 Amps
*Peak Non–repetitive Surge Current
(One Full cycle, 60 Hz, T
J
= +110°C)
I
TSM
30 Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I
2
t 3.7 A
2
s
*Peak Gate Power
(Pulse Width ≤ 1.0 µs, T
C
= 85°C)
P
GM
10 Watts
*Average Gate Power
(t = 8.3 ms, T
C
= 85°C)
P
G(AV)
0.5 Watt
*Peak Gate Voltage
(Pulse Width ≤ 1.0 µs, T
C
= 85°C)
V
GM
5.0 Volts
*Operating Junction Temperature Range T
J
–40 to
+110
°C
*Storage Temperature Range T
stg
–40 to
+150
°C
Mounting Torque (6-32 Screw)
(2)
— 8.0 in. lb.
*Indicates JEDEC Registered Data.
(1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of a compression washer. Mounting torque in
excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
TRIACS
4 AMPERES RMS
200 thru 600 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
2N6071A TO225AA 500/Box
http://onsemi.com
2N6071B TO225AA 500/Box
2N6073A TO225AA 500/Box
2N6073B TO225AA 500/Box
2N6075A TO225AA 500/Box
2N6075B TO225AA 500/Box
TO–225AA
(formerly TO–126)
CASE 077
STYLE 5
1
2
3
PIN ASSIGNMENT
1
2
3
Main Terminal 2
Gate
Main Terminal 1
MT1
G
MT2
May, 2000 – Rev. 3
1 Publication Order Number:
2N6071/D
C0050C0078C0054C0048C0055C0049C0065C0047C0066 C0083C0101C0114C0105C0101C0115
Preferred Device
C0083C0101C0110C0115C0105C0116C0105C0118C0101 C0071C0097C0116C0101 C0084C0114C0105C0097C0099C0115
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or
negative gate triggering.
• Sensitive Gate Triggering Uniquely Compatible for Direct Coupling
to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit
Logic Functions
• Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
• Blocking Voltages to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
• Small, Rugged, Thermopad Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Device Marking: Device Type, e.g., 2N6071A, Date Code
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
*Peak Repetitive Off-State Voltage
(1)
(T
J
= C004240 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
2N6071A,B
2N6073A,B
2N6075A,B
V
DRM,
V
RRM
200
400
600
Volts
*On-State RMS Current (T
C
= 85°C)
Full Cycle Sine Wave 50 to 60 Hz
I
T(RMS)
4.0 Amps
*Peak Non–repetitive Surge Current
(One Full cycle, 60 Hz, T
J
= +110°C)
I
TSM
30 Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I
2
t 3.7 A
2
s
*Peak Gate Power
(Pulse Width ≤ 1.0 µs, T
C
= 85°C)
P
GM
10 Watts
*Average Gate Power
(t = 8.3 ms, T
C
= 85°C)
P
G(AV)
0.5 Watt
*Peak Gate Voltage
(Pulse Width ≤ 1.0 µs, T
C
= 85°C)
V
GM
5.0 Volts
*Operating Junction Temperature Range T
J
–40 to
+110
°C
*Storage Temperature Range T
stg
–40 to
+150
°C
Mounting Torque (6-32 Screw)
(2)
— 8.0 in. lb.
*Indicates JEDEC Registered Data.
(1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) Torque rating applies with use of a compression washer. Mounting torque in
excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
TRIACS
4 AMPERES RMS
200 thru 600 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
2N6071A TO225AA 500/Box
http://onsemi.com
2N6071B TO225AA 500/Box
2N6073A TO225AA 500/Box
2N6073B TO225AA 500/Box
2N6075A TO225AA 500/Box
2N6075B TO225AA 500/Box
TO–225AA
(formerly TO–126)
CASE 077
STYLE 5
1
2
3
PIN ASSIGNMENT
1
2
3
Main Terminal 2
Gate
Main Terminal 1
MT1
G
MT2