2N6071
器件描述：TRIACs 4 AMPERES RMS 200 thru 600 VOLTS
器件厂商：MOTOROLA [Motorola, Inc]
文件大小：118.13KB，共6页
Sponsor by e络盟器件资料摘要：
1
Motorola Thyristor Device Data
C0083C0101C0110C0115C0105C0116C0105C0118C0101 C0071C0097C0116C0101 C0084C0114C0105C0097C0099C0115
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL,
CMOS and Operational Amplifier Integrated Circuit Logic Functions
• Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
• Blocking Voltages to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted.)
Rating Symbol Value Unit
*Peak Repetitive Off-State Voltage
(1)
(Gate Open, T
J
= 25 to 110°C) 2N6071A,B
2N6073A,B
2N6075A,B
V
DRM
200
400
600
Volts
*On-State Current RMS (T
C
= 85°C) I
T(RMS)
4 Amps
*Peak Surge Current
(One Full cycle, 60 Hz, T
J
= –40 to +110°C)
I
TSM
30 Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I
2
t 3.7 A
2
s
*Peak Gate Power P
GM
10 Watts
*Average Gate Power P
G(AV)
0.5 Watt
*Peak Gate Voltage V
GM
5 Volts
*Indicates JEDEC Registered Data.
1. V
DRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N6071/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1998
C0050C0078C0054C0048C0055C0049C0065C0044C0066
C0050C0078C0054C0048C0055C0051C0065C0044C0066
C0050C0078C0054C0048C0055C0053C0065C0044C0066
CASE 77-08
(TO-225AA)
STYLE 5
TRIACs
4 AMPERES RMS
200 thru 600 VOLTS
*Motorola preferred devices
MT1
G
MT2
MT1
MT2
G
MT2
C0042
C0042
C0042
REV 1
Motorola Thyristor Device Data
C0083C0101C0110C0115C0105C0116C0105C0118C0101 C0071C0097C0116C0101 C0084C0114C0105C0097C0099C0115
Silicon Bidirectional Thyristors
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a
blocking to a conducting state for either polarity of applied anode voltage with positive
or negative gate triggering.
• Sensitive Gate Triggering Uniquely Compatible for Direct Coupling to TTL, HTL,
CMOS and Operational Amplifier Integrated Circuit Logic Functions
• Gate Triggering 4 Mode — 2N6071A,B, 2N6073A,B, 2N6075A,B
• Blocking Voltages to 600 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted.)
Rating Symbol Value Unit
*Peak Repetitive Off-State Voltage
(1)
(Gate Open, T
J
= 25 to 110°C) 2N6071A,B
2N6073A,B
2N6075A,B
V
DRM
200
400
600
Volts
*On-State Current RMS (T
C
= 85°C) I
T(RMS)
4 Amps
*Peak Surge Current
(One Full cycle, 60 Hz, T
J
= –40 to +110°C)
I
TSM
30 Amps
Circuit Fusing Considerations
(t = 8.3 ms)
I
2
t 3.7 A
2
s
*Peak Gate Power P
GM
10 Watts
*Average Gate Power P
G(AV)
0.5 Watt
*Peak Gate Voltage V
GM
5 Volts
*Indicates JEDEC Registered Data.
1. V
DRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N6071/D
C0077C0079C0084C0079C0082C0079C0076C0065
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1998
C0050C0078C0054C0048C0055C0049C0065C0044C0066
C0050C0078C0054C0048C0055C0051C0065C0044C0066
C0050C0078C0054C0048C0055C0053C0065C0044C0066
CASE 77-08
(TO-225AA)
STYLE 5
TRIACs
4 AMPERES RMS
200 thru 600 VOLTS
*Motorola preferred devices
MT1
G
MT2
MT1
MT2
G
MT2
C0042
C0042
C0042
REV 1