NPN Darlington Silicon Power
Transistor
. . . designed for general–purpose amplifier and low frequency
switching applications.
• High DC Current Gain —
h
FE
= 3000 (Typ) @ I
C
= 4.0 Adc
• Collector–Emitter Sustaining Voltage — @ 100 mA
V
CEO(sus)
= 80 Vdc (Min)
• Low Collector–Emitter Saturation Voltage —
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 4.0 Adc
= 3.0 Vdc (Max) @ I
C
= 8.0 Adc
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
V
CEO
ÎÎÎÎ
80
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎ
V
CB
ÎÎÎÎ
80
ÎÎÎÎ
Vdc
Emitter–Base Voltage V
EB
5.0 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Peak
ÎÎÎÎ
ÎÎÎÎÎ
I
C
ÎÎÎ
ÎÎÎÎ
8.0
16
ÎÎÎ
ÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎÎ
I
B
ÎÎÎÎ
120
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ T
C
= 25 C
Derate above 25 C
ÎÎÎÎ
ÎÎÎÎÎ
P
D
ÎÎÎ
ÎÎÎÎ
100
0.571
ÎÎÎ
ÎÎÎÎ
Watts
W/ C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction Temperature
Range
ÎÎÎÎÎ
T
J
, T
stg
ÎÎÎÎ
–65 to +200
ÎÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
R
θJC
ÎÎÎÎ
1.75
ÎÎÎÎ
C/W
(1) Indicates JEDEC Registered Data
100
0
0 25 50 75 100 125 150 200
Figure 1. Power Derating
T
C
, TEMPERATURE (°C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
60
80
175
40
20
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1 Publication Order Number:
2N6056/D
2N6056
ON Semiconductor Preferred Device
DARLINGTON
8 AMPERE
SILICON
POWER TRANSISTOR
80 VOLTS
100 WATTS
CASE 1–07
TO–204AA
(TO–3)