Plastic Darlington
Complementary Silicon Power
Transistors
. . . designed for general–purpose amplifier and low–speed
switching applications.
• High DC Current Gain —
h
FE
= 2000 (Typ) @ I
C
= 2.0 Adc
• Collector–Emitter Sustaining Voltage — @ 100 mAdc
V
CEO(sus)
= 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc
(Min) — 2N6036, 2N6039
• Forward Biased Second Breakdown Current Capability
I
S/b
= 1.5 Adc @ 25 Vdc
• Monolithic Construction with Built–In Base–Emitter Resistors to
Limit
E
Leakage Multiplication
• Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic
Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
2N6035
2N6038
ÎÎÎÎ
ÎÎÎÎ
2N6036
2N6039
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
V
CEO
ÎÎÎÎ
60
ÎÎÎÎ
80
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎ
V
CB
ÎÎÎÎ
60
ÎÎÎÎ
80
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎ
V
EB
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
5.0
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Peak
ÎÎÎÎÎ
I
C
ÎÎÎÎÎÎÎ
4.0
8.0
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎÎ
I
B
ÎÎÎÎÎÎÎ
100
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ T
C
= 25 C
Derate above 25 C
ÎÎÎÎÎ
P
D
ÎÎÎÎÎÎÎ
40
0.32
ÎÎÎ
Watts
W/ C
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ T
A
= 25 C
Derate above 25 C ÎÎÎÎ
ÎÎÎÎÎ
P
D
ÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
1.5
0.012 ÎÎ
ÎÎÎ
Watts
ÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎÎ
T
J
, T
stg
ÎÎÎÎÎÎÎ
–65 to +150
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
θ
JC
ÎÎÎÎÎÎ
3.12
ÎÎÎ
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient
ÎÎÎÎÎ
θ
JA
ÎÎÎÎÎÎ
83.3
ÎÎÎ
C/W
(1) Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor

 Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 10
1 Publication Order Number:
2N6035/D
2N6035
2N6036
2N6038
2N6039
*ON Semiconductor Preferred Device
DARLINGTON
4–AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80 VOLTS
40 WATTS
*
*
CASE 77–09
TO–225AA TYPE
PNP
NPN
3
2
1
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE