2N5962/ MMBT5962
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
This device is designed for use as low noise, high gain, general
purpose amplifiers requiring collector currents to 50 mA.
Sourced from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 45 V
VCBO Collector-Base Voltage 45 V
V
EBO
Emitter-Base Voltage 8.0 V
I
C
Collector Current - Continuous 100 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N5962 *MMBT5962
P
D
Total Device Dissipation
Derate above 25°C
625
5.0
350
2.8
mW
mW/°C
Rθ
JC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 200 357 °C/W
C
B
E
SOT-23
Mark: 117
MMBT59622N5962
C
B
E
TO-92
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
 1997 Fairchild Semiconductor Corporation