2N5961
器件描述：NPN General Purpose Amplifier
器件厂商：FAIRCHILD [Fairchild Semiconductor]
文件大小：295.11KB，共7页
Sponsor by e络盟器件资料摘要：
2N5961
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
2N5961
This device is designed for use as low noise, high gain, general
purpose amplifiers requiring collector currents to 50 mA. Sourced
from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Val60ue Units
V
CEO
Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 8.0 V
I
C
Collector Current - Continuous 100 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N5961
PD Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
Discrete POWER & Signal
Technologies
NPN General Purpose Amplifier
2N5961
This device is designed for use as low noise, high gain, general
purpose amplifiers requiring collector currents to 50 mA. Sourced
from Process 07. See 2N5088 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Val60ue Units
V
CEO
Collector-Emitter Voltage 60 V
VCBO Collector-Base Voltage 60 V
V
EBO
Emitter-Base Voltage 8.0 V
I
C
Collector Current - Continuous 100 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N5961
PD Total Device Dissipation
Derate above 25°C
625
5.0
mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation